Germà Garcia-Belmonte: Universitat Jaume I
Impedance analysis of carrier recombination flux in organic solar cells in relation to light and dark j-V characteristics
Professor, Department of Physics, Universitat Jaume I
Impedance analysis of carrier recombination flux in organic solar cells in relation
to light and dark j-V characteristics
September 28, 2011 | 12:00pm | Elings Hall 1601
A connection is established between recombination and series resistances extracted from impedance spectroscopy and current-voltage curves of polythipphene:fullerene organic solar cells. Recombination is shown to depend exclusively on the (Fermi level splitting) voltage, which allows construction of the j-V characteristics in any required conditions based on a restricted set of measurements. The analysis highlights carrier recombination current as the determining mechanism of organic solar cell performance.
Germà Garcia-Belmont (1964) received his Ph.D. degree at Universidad Nacional de Educación a Distancia, 1996. He worked from 1988 at CIEMAT, Madrid, on experimental as well as theoretical research in the area of digital processing of nuclear signal. He joined the Universitat Jaume I, Castelló, in 1992 and currently works as Professor of Applied Physics (2010) at the Department of Physics (Photovoltaic and Optoelectronic Devices Group). He follows researches in various topics within the field of Organic Electronics and photovoltaics as electronic mechanisms in organic light-emitting diodes, organic photovoltaics, and plastic and thin-film solar cells. Device physics using impedance spectroscopy (including modeling and measuring) is his main subject.